InP MOCVD

Metal-Organic Chemical Vapor Deposition (MOCVD) is a critical technique for growing high-quality InP (Indium Phosphide) epitaxial wafers, which are essential for optoelectronic devices (lasers, photodetectors) and high-frequency electronics. Several key MOCVD reactor models are widely used in the industry and research for InP growth. Here are the most prominent ones:

1. AIXTRON (Now part of ASM International)

• AIX 2800G4 & G5
  • Popular for III-V semiconductor growth, including InP.
  • Features a Planetary Reactor® design for uniform deposition.
  • Used for high-volume production of InP-based devices.
• AIX 300/4 & AIX 200/4
  • Suitable for R&D and small-scale production.
  • Precise control over gas flows and temperature for InP and related alloys (InGaAs, InAlAs).

2. Veeco (Now part of Riber)

• Veeco Propel™ GaN & Compound Semiconductor MOCVD
  • Originally designed for GaN but adapted for InP growth.
  • High uniformity and low defect density.
• Veeco TurboDisc® K465i
  • Used for both GaAs and InP-based materials.
  • Good for high-throughput production.

3. Nippon Sanso (Now part of Taiyo Nippon Sanso)

• SR-4000 & SR-6000 Series
  • Widely used in Japan and Asia for InP epitaxy.
  • High-precision gas control for InP, InGaAsP, and related materials.

4. Thomas Swan (Now part of AIXTRON)

• Close Coupled Showerhead (CCS) Reactors
  • Known for excellent uniformity and low defect growth.
  • Used for both research and production-scale InP epitaxy.

5. Riber

• Riber Epineat & Riber Compact
  • French-made systems used in research labs for InP and related III-V materials.
  • Good for low-volume, high-precision epitaxy.

Key Considerations for InP MOCVD Growth

• Precursor Gases: Trimethylindium (TMIn) and phosphine (PH₃) are commonly used.
• Substrate Temperature: Typically 550–650°C for InP growth.
• Uniformity & Defect Control: Critical for optoelectronic applications.
• Doping Control: Precise n-type (Si, Te) and p-type (Zn, Mg) doping is essential.

Conclusion

The AIXTRON G4/G5 and Veeco Propel/K465i are among the most widely used MOCVD systems for InP epitaxy, especially in commercial production. For research labs, Thomas Swan CCS and Riber systems are also popular. The choice depends on throughput, uniformity requirements, and budget.

Would you like recommendations for specific applications (e.g., lasers, photodiodes, or HEMTs)?